Semiconductor device

US9627489B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Hung Hung · Yokohama, JP
• Yasuhiro Isobe · Kyoto, JP
• Kohei Oasa · Nonoichi, JP
• Akira Yoshioka · Yokohama, JP

Key dates

• Filing date: Aug 20, 2015
• Grant date: Apr 18, 2017
• Expiry date: Aug 20, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/854

Abstract

A semiconductor device includes a first semiconductor layer on a substrate, a second semiconductor layer containing an n-type dopant, on the first semiconductor layer, a third semiconductor layer having a resistance greater than a resistance of the second semiconductor layer, on the second semiconductor layer, a fourth semiconductor layer containing a nitride semiconductor, on the third semiconductor layer, and a fifth semiconductor layer containing a nitride semiconductor having a band gap greater than a band gap of the fourth semiconductor layer, on the fourth semiconductor layer.