Patent · US Active

Dielectric repair for emerging memory devices

US9627608B2 · kind B2 · utility

2Cited by

10References

22Claims

0Family size

Assignee

Lam Research Corporation · US

Inventors

Nerissa Draeger · Milpitas, US
Thorsten Lill · Santa Clara, US
Diane Hymes · San Jose, US

Key dates

Filing date	Sep 11, 2014
Grant date	Apr 18, 2017
Priority date	—
Expiry date	Sep 11, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/85
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Systems and method include providing a non-volatile random access memory (NVRAM) stack including a plurality of layers. The plurality of layers includes a dielectric layer and a metal layer. The metal layer of the NVRAM stack is patterned. The patterning causes damage to lateral side portions of the dielectric layer. The lateral portions of the dielectric layer are repaired by depositing dielectric material on the lateral side portions of the dielectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.