Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds
US9631272B2 · kind B2 · utility
2Cited by
116References
13Claims
0Family size
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Key dates
| Filing date | Nov 1, 2013 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Nov 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming metal carbide films are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and an aluminum hydrocarbon compound, such as TMA, DMAH, or TEA. The aluminum hydrocarbon compound is selected to achieve the desired properties of the metal carbide film, such as aluminum concentration, resistivity, adhesion and oxidation resistance. In some embodiments, the methods are used to form a metal carbide layer that determines the work function of a control gate in a flash memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.