Semiconductor structure including a trench capping layer and method for the formation thereof

US9633857B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Elliot John Smith · Dresden, DE
• Steffen Sichler · Dresden, DE

Key dates

• Filing date: Mar 31, 2016
• Grant date: Apr 25, 2017
• Expiry date: Mar 31, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor structure includes a trench isolation structure, a trench capping layer, a gate structure and a sidewall spacer. The trench isolation structure includes a first electrically insulating material. The trench capping layer is provided over the trench isolation structure. The trench capping layer includes a second electrically insulating material that is different from the first electrically insulating material. The gate structure includes a gate insulation layer including a high-k material and a gate electrode over the gate insulation layer. The gate structure has a first portion over the trench capping layer. The sidewall spacer is provided adjacent the gate structure. A portion of the sidewall spacer is provided on the trench capping layer and contacts the trench capping layer laterally of the gate insulation layer.