3D NAND with oxide semiconductor channel
US9634097B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2014 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Jan 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are 3D NAND memory devices having an oxide semiconductor vertical NAND channel and methods for forming the same. The oxide semiconductor may have a crystalline structure. The channel of the vertically-oriented NAND string may be cylindrically shaped. The crystalline structure has an axis that may be aligned crystalline with respect to the cylindrical shape of the vertically-oriented channel substantially throughout the vertically-oriented channel. The crystalline structure may have a first axis that is aligned parallel to the vertical channel, a second axis that is aligned perpendicular to a surface of the cylindrically shaped channel, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.