Patent · US Active

CMOS in situ doped flow with independently tunable spacer thickness

US9634103B2 · kind B2 · utility

4Cited by

1References

13Claims

0Family size

Assignees

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
STMICROELECTRONICS, INC. · US

Inventors

Maud Vinet · Voiron, FR
Laurent Grenouillet · Voiron, FR
Qing Liu · Guilderland, US

Key dates

Filing date	Apr 3, 2013
Grant date	Apr 25, 2017
Priority date	—
Expiry date	Apr 3, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for manufacturing a microelectronic device with transistors of different types having raised source and drain regions and different overlap regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.