Fluorine free tungsten ALD/CVD process
US9637395B2 · kind B2 · utility
1Cited by
12References
9Claims
0Family size
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Key dates
| Filing date | Sep 26, 2013 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Sep 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01B1/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.