Mitigating hot electron program disturb
US9640273B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2016 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Aug 25, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5628
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Techniques are provided for preventing program disturb when programming a memory device. Hot electron injection program disturb is prevented or reduced. Voltage boosting of the NAND channel of a program inhibited NAND string may be controlled in a manner to reduce or eliminate a lateral electric field that could possibly accelerate electrons in the NAND channel. If the electrons gain enough energy due to the lateral electric field, they could potentially be injected into the charge storage region of a memory cell, thereby causing program disturb. Thus, the voltage boosting can prevent or reduce injection of hot electrons from the NAND channel to a charge storage region of a NAND memory cell during a programming operation, thereby preventing or reducing program disturb.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.