Wafer bonding using boron and nitrogen based bonding stack
US9640514B1 · kind B1 · utility
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17Claims
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Key dates
| Filing date | Mar 29, 2016 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Mar 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/2064
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonding material stack for wafer-to-wafer bonding is provided. The bonding material stack may include a plurality of layers each including boron and nitrogen. In one embodiment, the plurality of layers may include: a first boron oxynitride layer for adhering to a wafer; a boron nitride layer over the first boron oxynitride layer; a second boron oxynitride layer over the boron nitride layer; and a silicon-containing boron oxynitride layer over the second boron oxynitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.