Aluminum nitride barrier layer

US9646876B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Deenesh Padhi · Sunnyvale, US
• Srinivas Guggilla · San Jose, US
• Alexandros T. Demos · Fremont, US
• Bhaskar Kumar · Santa Clara, US
• He Ren · San Jose, US
• Priyanka DASH · Menlo Park, US

Key dates

• Filing date: Feb 27, 2015
• Grant date: May 9, 2017
• Expiry date: Mar 14, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53295
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming features in a dielectric layer is described. A via, trench or a dual-damascene structure may be present in the dielectric layer prior to depositing a conformal aluminum nitride layer. The conformal aluminum nitride layer is configured to serve as a barrier to prevent diffusion across the barrier. The methods of forming the aluminum nitride layer involve the alternating exposure to two precursor treatments (like ALD) to achieve high conformality. The high conformality of the aluminum nitride barrier layer enables the thickness to be reduced and the effective conductivity of the subsequent gapfill metal layer to be increased.