Chemoepitaxy etch trim using a self aligned hard mask for metal line to via
US9646883B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2015 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Jun 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5329
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming metal lines that are aligned to underlying metal features that includes forming a neutral layer atop a hardmask layer that is overlying a dielectric layer. The neutral layer is composed of a neutral charged di-block polymer. Patterning the neutral layer, the hardmask layer and the dielectric layer to provide openings that are filled with a metal material to provide metal features. A self-assembled di-block copolymer material is deposited on a patterned surface of the neutral layer and the metal features. The self-assembled di-block copolymer material includes a first block composition with a first affinity for alignment to the metal features. The first block composition of the self-assembled di-block copolymer is converted to a metal that is self-aligned to the metal features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.