Method of removing a hard mask layer on a gate structure while forming a protective layer on the surface of a substrate
US9646889B1 · kind B1 · utility
4Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2016 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Jan 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first gate structure on the substrate and a first spacer adjacent to the first gate structure; forming a first epitaxial layer in the substrate adjacent to the first gate structure; forming a first hard mask layer on the first gate structure; removing part of the first hard mask layer to form a protective layer on the first epitaxial layer; and removing the remaining first hard mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.