Method and apparatus for reducing radiation induced change in semiconductor structures
US9646893B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2016 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Mar 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67103
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure relate to an apparatus and a method for reducing the adverse effects of exposing portions of an integrated circuit (IC) device to various forms of radiation during one or more operations found within the IC formation processing sequence by controlling the environment surrounding and temperature of an IC device during one or more parts of the IC formation processing sequence. The provided energy may include the delivery of radiation to a surface of a formed or a partially formed IC device during a deposition, etching, inspection or post-processing process operation. In some embodiments of the disclosure, the temperature of the substrate on which the IC device is formed is controlled to a temperature that is below room temperature (e.g., <20° C.) during the one or more parts of the IC formation processing sequence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.