Low voltage embedded memory having conductive oxide and electrode stacks
US9647208B2 · kind B2 · utility
1Cited by
3References
10Claims
0Family size
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Key dates
| Filing date | Nov 24, 2015 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Nov 24, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0073
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.