Structure of metal gate structure and manufacturing method of the same
US9653300B2 · kind B2 · utility
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19References
7Claims
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Key dates
| Filing date | Apr 16, 2013 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Jan 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a metal gate structure is provided. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a gate dielectric layer is formed in the gate trench. A silicon-containing work function layer is formed on the gate dielectric layer in the gate trench. Finally, the gate trench is filled up with a conductive metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.