Methods for forming metal organic tungsten for middle of the line (MOL) applications
US9653352B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2014 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Jun 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76876
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.