Semiconductor device resolution enhancement by etching multiple sides of a mask
US9658531B2 · kind B2 · utility
0Cited by
7References
11Claims
0Family size
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Key dates
| Filing date | Sep 3, 2014 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Oct 10, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/42
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask is disclosed which includes a plurality of first phase shift regions disposed on a first side of the mask, and a plurality of second phase shift regions disposed on a second side of the mask. The first phase shift regions and second phase shift regions may be alternating phase shift regions in which phase shift of the first phase shift regions is out of phase, for instance by 180 degrees, from phase shift of the second phase shift regions. A method for forming the mask, and a semiconductor device fabrication method using the mask is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.