Patent · US Active

Method for producing a material-bonding connection between a semiconductor chip and a metal layer

US9659793B2 · kind B2 · utility

2Cited by

1References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Nicolas Heuck · Lehre, DE
Frederik Otto · Recklinghausen, DE
Christian Steininger · Tuntenhausen, DE

Key dates

Filing date	Nov 17, 2015
Grant date	May 23, 2017
Priority date	—
Expiry date	Nov 17, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3512
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a material-bonding connection between a semiconductor chip and a metal layer is disclosed. For this purpose, a semiconductor chip, a metal layer, which has a chip mounting portion, and also a bonding medium containing a metal powder are provided. The metal powder is sintered in a sintering process. In this case, throughout a prescribed sintering time, the prescribed requirements are met, that the bonding medium is arranged between the semiconductor chip and the metal layer and extends right through from the semiconductor chip to the metal layer, that the semiconductor chip and the metal layer are pressed against one another in a pressing-pressure range that lies above a minimum pressing pressure, that the bonding medium is kept in a temperature range that lies above a minimum temperature and that a sound signal is introduced into the bonding medium.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.