Graphoepitaxy directed self-assembly process for semiconductor fin formation
US9659824B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2015 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Apr 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Guiding pattern portions are formed on a surface of a lithographic material stack that is disposed on a surface of a semiconductor substrate. A copolymer layer is then formed between each neighboring pair of guiding pattern portions and thereafter a directed self-assembly process is performed that causes phase separation of the various polymeric domains of the copolymer layer. Each guiding pattern portion is selectively removed, followed by the removal of each first phase separated polymeric domain. Each second phase separated polymeric domain remains and is used as an etch mask in forming semiconductor fins in an upper semiconductor material portion of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.