Patent · US Active

Semiconductor wafer and method

US9660037B1 · kind B1 · utility

35Cited by

2References

19Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Arno Zechmann · Villach, AT
Annette Sanger · Dresden, DE
Ulrike Fastner · Villach, AT
Beate Weissnicht · Villach, AT
Stefan Krivec · Villach, AT

Key dates

Filing date	Dec 15, 2015
Grant date	May 23, 2017
Priority date	—
Expiry date	Dec 15, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/62
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment, a method includes forming an adhesion promotion layer on at least portions of a conductive surface arranged on a Group III nitride-based semiconductor layer, applying a resist layer to the adhesion promotion layer such that regions of the conductive surface are uncovered by the adhesion promotion layer and the resist layer, applying by electroplating a conductive layer to the regions of the conductive surface uncovered by the adhesion promotion layer and the resist layer, and removing the resist layer and removing the adhesion promotion layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.