Self aligned silicon carbide contact formation using protective layer

US9666482B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ravi Keshav Joshi · Klagenfurt, AT
• Romain Esteve · Munich, DE
• Markus Kahn · Rangersdorf, AT
• Kurt Pekoll · Villach, AT
• Juergen Steinbrenner · Zistersdorf, AT
• Gerald Unegg · Villach, AT

Key dates

• Filing date: Sep 14, 2016
• Grant date: May 30, 2017
• Expiry date: Sep 14, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A silicon-carbide substrate that includes a doped contact region and a dielectric layer is provided. A protective layer is formed on the dielectric layer. A structured mask is formed on the protective layer. Sections of the protective layer and the dielectric layer that are exposed by openings in the mask are removed. The structured mask is removed. A metal layer is deposited such that a first portion of the metal layer directly contacts the doped contact region and a second portion of the metal layer lines the remaining sections of the protective layer and the dielectric layer. A first rapid thermal anneal process is performed. After performing the first rapid thermal anneal process, the second portion of the metal layer and the remaining section of the protective layer are removed without removing the first portion of the metal layer.