Method for depositing a chlorine-free conformal SiN film

US9670579B2 · kind B2 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Dennis M. Hausmann · Lake Oswego, US
• Jon Henri · West Linn, US
• Bart van Schravendijk · Sunnyvale, US
• Easwar Srinivasan · Beaverton, US

Key dates

• Filing date: May 15, 2015
• Grant date: Jun 6, 2017
• Expiry date: Dec 9, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/792
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.