Fabrication of higher-K dielectrics
US9673108B1 · kind B1 · utility
1Cited by
11References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2015 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Dec 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor structure, and the resultant structure. The method includes forming an oxide layer above a substrate. The method includes forming a metal layer above the oxide layer. The method includes forming a first capping layer above the metal layer. A material forming the first capping layer may be titanium oxide, or titanium oxynitride. The method includes annealing the semiconductor structure. Annealing the semiconductor structure may result in diffusing a metal from the metal layer into the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.