Three-dimensional memory devices containing memory block bridges

US9679906B2 · kind B2 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventors

• Zhenyu Lu · Hubei, CN
• Johann Alsmeier · San Jose, US
• Daxin Mao · Cupertino, US
• Wenguang Shi · Milpitas, US
• Sateesh Koka · Milpitas, US
• Raghuveer S. Makala · Campbell, US
• George Matamis · Danville, US
• Yao-Sheng Lee · Tampa, US
• Chun Ge · San Jose, US

Key dates

• Filing date: Aug 11, 2015
• Grant date: Jun 13, 2017
• Expiry date: Aug 11, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/50

Abstract

A monolithic three-dimensional memory device includes a first memory block containing a plurality of memory sub-blocks located on a substrate. Each memory sub-block includes a set of memory stack structures and a portion of alternating layers laterally surrounding the set of memory stack structures. The alternating layers include insulating layers and electrically conductive layers. A first portion of a neighboring pair of memory sub-blocks is laterally spaced from each other along a first horizontal direction by a backside contact via structure. A subset of the alternating layers contiguously extends between a second portion of the neighboring pair of memory sub-blocks through a gap in a bridge region between two portions of the backside contact via structure that are laterally spaced apart along a second horizontal direction to provide a connecting portion between the neighboring pair of memory sub-blocks.