Method of generating plasma in remote plasma source and method of fabricating semiconductor device using the same method
US9685346B2 · kind B2 · utility
1Cited by
5References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 13, 2015 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Jul 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are a method of generating plasma and a method of fabricating a semiconductor device including the method, which may improve selectivity in an etching process and minimize damage to layers. The method of generating plasma includes generating first plasma by supplying at least one first process gas into a first remote plasma source (RPS) and applying first energy having a first power at a first duty ratio, and generating second plasma by supplying at least one second process gas into a second RPS and applying second energy having a second power at a second duty ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.