Compositions comprising base-reactive component and processes for photolithography
US9696627B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Dec 13, 2010 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Oct 28, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/322
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have base-reactive groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.