Introducing self-aligned dopants in semiconductor fins
US9698018B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2016 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Apr 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of introducing self-aligned dopants in semiconductor fins and the resulting device are provided. Embodiments include providing semiconductor fins on first and second portions of a substrate; forming a BSG layer on side surfaces of the semiconductor fins on the first portion of the substrate; forming a first SiN layer on the BSG layer; forming a high quality oxide layer over an upper surface of the substrate, the first SiN layer and side surfaces of the semiconductor fins on the second portion of the substrate; forming a PSG layer over the high quality oxide layer on the second portion of the substrate and side surfaces of the semiconductor fins on the second portion of the substrate; and forming a second SiN layer over the high quality oxide layer and the PSG layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.