Magnetism-controllable dummy structures in memory device
US9698200B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2016 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Oct 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A device and a method of forming a device are disclosed. The method includes providing a substrate defined with first and second functional regions and first and second non-functional regions. The first non-functional region corresponds to a proximate memory region which is proximate to and surrounds the first functional region and the second non-functional region corresponds to an external logic circuit region which surrounds at least the second functional region. A magnetic memory element is formed in the first functional region and a logic element is formed in the second functional region. A plurality of magnetism controllable dummy structures are formed in the proximate memory region and external logic circuit region. The magnetism controllable dummy structures provide uniform magnetic field to the magnetic memory element and prevents electrical-magnetic interaction between the magnetic memory and logic elements on the same substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.