Method for causing tensile strain in a semiconductor film
US9704709B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 9, 2016 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Sep 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Method for producing a layer of strained semiconductor material, the method comprising steps for: a) formation on a substrate of a stack comprising a first semiconductor layer based on a first semiconductor material coated with a second semiconductor layer based on a second semiconductor material having a different lattice parameter to that of the first semiconductor material, b) producing on the second semiconductor layer a mask having a symmetry, c) rendering amorphous the first semiconductor layer along with zones of the second semiconductor layer without rendering amorphous one or a plurality of regions of the second semiconductor layer protected by the mask and arranged respectively opposite the masking block(s), d) performing recrystallization of the regions rendered amorphous and the first semiconductor layer resulting in this first semiconductor layer being strained (FIG. 1A).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.