Under-bump metal structures for interconnecting semiconductor dies or packages and associated systems and methods
US9704781B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2013 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Nov 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/365
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present technology is directed to manufacturing semiconductor dies with under-bump metal (UBM) structures for die-to-die and/or package-to-package interconnects or other types of interconnects. In one embodiment, a method for forming under-bump metal (UBM) structures on a semiconductor die comprises constructing a UBM pillar by plating a first material onto first areas of a seed structure and depositing a second material over the first material. The first material has first electrical potential and the second material has a second electrical potential greater than the first electrical potential. The method further comprises reducing the difference in the electrical potential between the first material and the second material, and then removing second areas of the seed structure between the UBM pillars thereby forming UBM structures on the semiconductor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.