Methods of forming fins for FinFET semiconductor devices and the selective removal of such fins

US9704973B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Ruilong Xie · Niskayuna, US
• Andy Wei · Queensbury, US

Key dates

• Filing date: Apr 1, 2014
• Grant date: Jul 11, 2017
• Expiry date: Jul 14, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0245

Abstract

One method includes forming a plurality of first trenches in a semiconductor substrate to thereby define a plurality of initial fins in the substrate, removing at least one, but less than all, of the plurality of initial fins, forming a fin protection layer on at least the sidewalls of the remaining initial fins, with the fin protection layer in position, performing an etching process to extend a depth of the first trenches to thereby define a plurality of final trenches with a final trench depth, wherein the final trenches define a plurality of final fin structures that each comprise an initial fin, removing the fin protection layer, and forming a recessed layer of insulating material in the final trenches, wherein the recessed layer of insulating material has a recessed surface that exposes a portion of the final fin structures.