Patent · US Active

Mirror arrangement for an EUV projection exposure apparatus, method for operating the same, and EUV projection exposure apparatus

US9709770B2 · kind B2 · utility

0Cited by

3References

14Claims

0Family size

Assignee

Carl Zeiss SMT GmbH · DE

Inventors

Boris Bittner · Roth, DE
Norbert Wabra · Werneck, DE
Sonja Schneider · Lehrberg, DE
Ricarda Schoemer · Zusmarshausen, DE
Hendrik Wagner · Bielefeld, DE
Rumen Iliew · Oberkochen, DE
Walter Pauls · Wertingen, DE

Key dates

Filing date	Dec 29, 2014
Grant date	Jul 18, 2017
Priority date	—
Expiry date	May 20, 2035

Classification

Technology area (CPC G)Physics
CPC primaryG21K2201/067
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A mirror arrangement for an EUV projection exposure apparatus for microlithography comprises a plurality of mirrors each having a layer which is reflective in the EUV spectral range and to which EUV radiation can be applied, and having a main body. In this case, at least one mirror of the plurality of mirrors has at least one layer comprising a material having a negative coefficient of thermal expansion. Moreover, a method for operating the mirror arrangement and a projection exposure apparatus are described. At least one heat source is arranged, in order to locally apply heat in a targeted manner to the at least one layer having a negative coefficient of thermal expansion of the at least one mirror.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.