Operational signals generated from capacitive stored charge
US9711213B2 · kind B2 · utility
6Cited by
12References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2014 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Sep 4, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0069
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, a memory device, and a system are disclosed. One such method includes applying a select pulse to a snapback device of a memory cell. This causes the memory cell to enter a conductive state. Once in the conductive state, the memory cell can be set or reset by a pulse formed from parasitic capacitive discharge from various paths coupled to the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.