Methods to improve in-film particle performance of amorphous boron-carbon hardmask process in PECVD system
US9711360B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2016 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Jul 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.