Method and apparatus for plasma dicing a semi-conductor wafer
US9711406B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2016 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Oct 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68327
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.