Memory hole structure in three dimensional memory
US9711522B2 · kind B2 · utility
3Cited by
11References
13Claims
0Family size
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Key dates
| Filing date | Oct 3, 2014 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Apr 4, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a three dimensional nonvolatile memory, memory holes extend vertically through two or more physical levels in which memory cells are formed. Memory hole structures are formed in memory holes to include vertical channels. Vertical trenches are subsequently formed to divide memory hole structures into two or more vertical NAND strings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.