Process for fabricating an integrated circuit cointegrating a FET transistor and an OxRAM memory location
US9711567B2 · kind B2 · utility
1Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2016 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Apr 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process for fabricating an integrated circuit (1), comprising the steps of:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.