Reverse-conducting IGBT

US9711626B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Frank Pfirsch · Birkenfeld, DE
• Dorothea Werber · Munich, DE

Key dates

• Filing date: Jul 27, 2015
• Grant date: Jul 18, 2017
• Expiry date: Jul 27, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

A reverse-conducting IGBT includes a semiconductor body having a drift region arranged between first and second surfaces. The semiconductor body further includes first collector regions arranged at the second surface and in Ohmic contact with a second electrode, backside emitter regions and in Ohmic contact with the second electrode. In a horizontal direction substantially parallel to the first surface, the first collector regions and backside emitter regions define an rc-IGBT area. The semiconductor body further includes a second collector region of the second conductivity type arranged at the second surface and in Ohmic contact with the second electrode. The second collector region defines in the horizontal direction a pilot-IGBT area. The rc-IGBT area includes first semiconductor regions in Ohmic contact with the first electrode and arranged between the drift region and first electrode. The pilot-IGBT area includes second semiconductor regions of the same conductivity type as the first semiconductor regions.