Plasma poisoning to enable selective deposition
US9716005B1 · kind B1 · utility
5Cited by
14References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2016 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Mar 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Atomic layer deposition in selected zones of a workpiece surface is accomplished by transforming the surfaces outside the selected zones to a hydrophobic state while the materials in the selected zones remain hydrophilic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.