Method for transferring a layer of a semiconductor and substrate comprising a confinement structure
US9716029B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2012 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Jun 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for transferring a layer of semiconductor by providing a donor substrate that includes a useful layer of a semiconductor material, a confinement structure that includes a confinement layer of a semiconductor material having a chemical composition that is different than that of the useful layer, and two protective layers of semiconductor material that are distinct from the confinement layer with the protective layers being arranged on both sides of the confinement layer; introducing ions into a donor substrate, bonding the donor substrate to a receiver substrate, subjecting the donor and receiver substrates to a heat treatment that provides an increase in temperature during which the confinement layer attracts the ions in order to concentrate them in the confinement layer, and detaching the donor substrate from the receiver substrate by breaking the confinement layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.