Redundant magnetic tunnel junctions in magnetoresistive memory
US9721632B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2017 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Jan 21, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory cells in a spin-torque magnetic random access memory (MRAM) include at least two magnetic tunnel junctions within each memory cell, where each memory cell only stores a single data bit of information. Access circuitry coupled to the memory cells are able to read from and write to a memory cell even when one of the magnetic tunnel junctions within the memory cell is defective and is no longer functional. Self-referenced and referenced reads can be used in conjunction with the multiple magnetic tunnel junction memory cells. In some embodiments, writing to the memory cell forces all magnetic tunnel junctions into a known state, whereas in other embodiments, a subset of the magnetic tunnel junctions are forced to a known state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.