Breakdown voltage blocking device
US9722041B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2012 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Dec 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
In one embodiment, a breakdown voltage blocking device can include an epitaxial region located above a substrate and a plurality of source trenches formed in the epitaxial region. Each source trench can include a dielectric layer surrounding a conductive region. The breakdown voltage blocking device can also include a contact region located in an upper surface of the epitaxial region along with a gate trench formed in the epitaxial region. The gate trench can include a dielectric layer that lines the sidewalls and bottom of the gate trench and a conductive region located between the dielectric layer. The breakdown voltage blocking device can include source metal located above the plurality of source trenches and the contact region. The breakdown voltage blocking device can include gate metal located above the gate trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.