Resistive random access memory device with a solid electrolyte including a region made of a first metal oxide and doped by a second element distinct from the first metal
US9722177B2 · kind B2 · utility
5Cited by
1References
10Claims
0Family size
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Key dates
| Filing date | Jun 11, 2015 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Jun 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material; a solid electrolyte including a region made of an oxide of a first metal element, referred to as first metal oxide doped by a second element, distinct from the first metal and able to form a second oxide, the second element being selected such that the band gap energy of the second oxide is strictly greater than the band gap energy of the first metal oxide, the atomic percentage of the second element within the region of the solid electrolyte being comprised between 5% and 20%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.