Passivation layer and method of making a passivation layer

US9728480B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Kurt Matoy · Strau, AT
• Hubert Maier · Villach, AT
• Christian Krenn · Pernegg, AT
• Elfriede Kraxner Wellenzohn · Villach, AT
• Helmut Schoenherr · Villach, AT
• Juergen Steinbrenner · Zistersdorf, AT
• Markus Kahn · Rangersdorf, AT
• Silvana Fister · Poggersdorf, AT
• Christoph Brunner · Villach, AT
• Herbert Gietler · Villach, AT
• Uwe Hoeckele · Regensburg, DE

Key dates

• Filing date: Apr 29, 2015
• Grant date: Aug 8, 2017
• Expiry date: Apr 29, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/291
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.