Method for forming a semiconductor device and a semiconductor device

US9728627B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Moriz Jelinek · Villach, AT
• Johannes Georg Laven · Taufkirchen, DE
• Helmut Oefner · Zorneding, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Werner Schustereder · Villach, AT

Key dates

• Filing date: Nov 9, 2015
• Grant date: Aug 8, 2017
• Expiry date: Nov 9, 2035

Classification

• Technology area (CPC —): General

Abstract

A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.