Cell-based reference voltage generation
US9734886B1 · kind B1 · utility
13Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2016 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Feb 1, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2297
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A first ferroelectric memory cell may be initialized to a first state and a second ferroelectric memory cell may be initialized to a different state. Each state may have a corresponding digit line voltage. The digit lines of the first and second ferroelectric memory cells may be connected so that charge-sharing occurs between the two digit lines. The voltage resulting from the charge-sharing between the two digit lines may be used by other components as a reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.