Controlling cleaning of a layer on a substrate using nozzles
US9735026B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2013 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Sep 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method for cleaning an ion implanted resist layer or a substrate after an ashing process. A duty cycle for turning on and turning off flows of a treatment liquid using two or more nozzles is generated. The substrate is exposed to the treatment liquid comprising a first treatment chemical, the first treatment chemical with a first film thickness, temperature, total flow rate, and first composition. A portion of a surface of the substrate is concurrently irradiated with UV light while controlling the selected plurality of cleaning operating variables in order to achieve the two or more cleaning objectives. The cleaning operating variables comprise two or more of the first temperature, first composition, first film thickness, UV wavelength, UV power, first process time, first rotation speed, duty cycle, and percentage of residue removal are optimized to achieve the two or more cleaning objectives.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.