Patent · US Active

Memory circuitry using write assist voltage boost

US9741410B2 · kind B2 · utility

2Cited by

2References

20Claims

0Family size

Assignee

Arm Limited · GB

Inventors

Andy Wangkun Chen · Austin, US
Yew Keong Chong · Austin, US
Gus Yeung · Austin, US
Bo Zheng · Sunnyvale, US
George McNeil Lattimore · Austin, US

Key dates

Filing date	Sep 17, 2015
Grant date	Aug 22, 2017
Priority date	—
Expiry date	Sep 17, 2035

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/419
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Within a memory 2 comprising an array 4 of bit cells 6 write driver circuitry 14 uses a boosted write signal which is boosted to a lower than normal level during a write operation. Column select transistors 16 are driven by column select circuitry 12. The column select signal is boosted to a lower than normal level when a column is unselected and to higher than a normal level when a column is selected. Voltage boost circuitry, such as charge pumps 20, 22 are employed within the column select circuitry 12 to achieve these boosted levels for the columns select signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.