Method of forming oxide layer
US9741572B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Mar 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an oxide layer is provided in the present invention. The method includes the following steps. A first oxide layer is formed on a semiconductor substrate, and a quality enhancement process is then performed to etch the first oxide layer and densify the first oxide layer at the same time for forming a second oxide layer. The first oxide layer is etched and densified at the same time by a mixture of dilute hydrofluoric acid (DHF) and hydrogen peroxide (H2O2) in the quality enhancement process. The thickness of the second oxide layer may be reduced and the quality of the second oxide layer may be enhanced by the quality enhancement process at the same time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.