Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate

US9741580B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Vishal Sipani · Boise, US
• Anton J. deVilliers · Boise, US
• William R. Brown · Brecksville, US
• Shane J. Trapp · Boise, US
• Ranjan Khurana · Boise, US
• Kevin R. Shea · Boise, US

Key dates

• Filing date: Mar 31, 2015
• Grant date: Aug 22, 2017
• Expiry date: Aug 5, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76816
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.